Instant Data Sanitization on Multi-Level-Cell NAND Flash Memory
TimeWednesday, July 13th6pm - 7pm PDT
LocationLevel 2 Lobby
DescriptionDeleting data instantly from NAND flash memories incurs hefty overheads, and increases wear level. Existing solutions involve unlinking the physical page addresses making data inaccessible through standard interfaces, but they carry the risk of data leakage. An all-zero-in-place data overwrite has been proposed as a countermeasure, but it applies only to SLC flash memories. This paper introduces an instant page sanitization method for MLC flash memories that prevent leakage of deleted information without any negative effects on valid data in shared pages. We verify the proposed method on commercial 3D NAND flash memory chips.